Ougazzaden, A.: search on Z-Library

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1

Low-damage dry-etched grating on an MQW active layer and dislocation-free InP regrowth for 1.55-/spl mu/m complex-coupled DFB lasers fabrication

Talneau, A., Bouadma, N., Lebellego, Y., Slempkes, S., Ougazzaden, A., Patriarche, G., Sermage, B.

Journal:

IEEE Photonics Technology Letters

Year:

1998

Language:

english

File:

PDF, 124 KB

english, 1998

2

Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm

Moudakir, T., Genty, F., Kunzer, M., Borner, P., Passow, T., Suresh, S., Patriarche, G., Kohler, K., Pletschen, W., Wagner, J., Ougazzaden, A.

Journal:

IEEE Photonics Journal

Year:

2013

Language:

english

File:

PDF, 793 KB

english, 2013

3

Interferometric measurement of the linewidth enhancement factor of a 1.55- mu m strained multiquantum-well InGaAs/InGaAsP amplifier

Ehrhardt, J., Villeneuve, A., Stegeman, G.I., Nakajima, H., Landreau, J., Ougazzaden, A.

Journal:

IEEE Photonics Technology Letters

Year:

1992

Language:

english

File:

PDF, 398 KB

english, 1992

4

Agile and fast switching monolithically integrated four wavelength selectable source at 1.55 μm

Talneau, A., Allovon, M., Bouadma, N., Slempkes, S., Ougazzaden, A., Nakajima, H.

Journal:

IEEE Photonics Technology Letters

Year:

1999

Language:

english

File:

PDF, 66 KB

english, 1999

5

20 Gbit/s high-performance integrated MQW TANDEM modulators and amplifier for soliton generation and coding

Souli, N., Devaux, F., Ramdane, A., Krauz, P., Ougazzaden, A., Huet, F., Carre, M., Sorel, Y., Kerdiles, J.F., Henry, M., Aubin, G., Jeanney, E., Montallant, T., Moulu, J., Nortier, B., Thomine, J.B.

Journal:

IEEE Photonics Technology Letters

Year:

1995

Language:

english

File:

PDF, 288 KB

english, 1995

6

Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire

Gautier, S., Moudakir, T., Patriarche, G., Rogers, D.J., Sandana, V.E., Hosseini Téherani, F., Bove, P., El Gmili, Y., Pantzas, K., Sundaram, Suresh, Troadec, D., Voss, P.L., Razeghi, M., Ougazzaden,

Journal:

Journal of Crystal Growth

Year:

2013

Language:

english

File:

PDF, 586 KB

english, 2013

7

Photonic integrated receiver for 40 Gbit∕s transmission

Mason, B., Chandrasekhar, S., Ougazzaden, A., Lentz, C., Geary, J.M., Buhl, L.L., Peticolas, L., Glogovsky, K., Freund, J.M., Reynolds, L., Przybylek, G., Walters, F., Sirenko, A., Boardman, J., Kerch

Journal:

Electronics Letters

Year:

2002

Language:

english

File:

PDF, 277 KB

english, 2002

8

Polarization-independent filtering in a grating-assisted horizontal directional coupler

Francois, S., Fouchet, S., Bouadma, N., Ougazzaden, A., Carre, M., Herve-Gruyer, G., Filoche, M., Carenco, A.

Journal:

IEEE Photonics Technology Letters

Year:

1995

Language:

english

File:

PDF, 265 KB

english, 1995

9

Monolithic integration of InGaAsP-InP strained-layer distributed feedback laser and external modulator by selective quantum-well interdiffusion

Ramdane, A., Krauz, P., Rao, E.V.K., Hamoudi, A., Ougazzaden, A., Robein, D., Gloukhian, A., Carre, M.

Journal:

IEEE Photonics Technology Letters

Year:

1995

Language:

english

File:

PDF, 268 KB

english, 1995

10

[IEEE 13th IEEE International Semiconductor Laser Conference - Kagazwa, Japan (Sept. 21-25, 1992)] 13th IEEE International Semiconductor Laser Conference - High power operation of phase-shifted DFB lasers with amplitude modulated coupling coefficient

Talneau, A., Charil, J., Ougazzaden, A., Bouley, J.C.

Year:

1992

Language:

english

File:

PDF, 240 KB

english, 1992

11

Monolithic integration of multiple-quantum-well lasers and modulators for high-speed transmission

Ramdane, A., Devaux, F., Souli, N., Delprat, D., Ougazzaden, A.

Journal:

IEEE Journal of Selected Topics in Quantum Electronics

Year:

1996

Language:

english

File:

PDF, 190 KB

english, 1996

12

Submilliwatt optical bistability in wafer fused vertical cavity at 1.55-μm wavelength

Jeannes, F., Patriarche, G., Azoulay, R., Ougazzaden, A., Landreau, J., Oudar, J.L.

Journal:

IEEE Photonics Technology Letters

Year:

1996

Language:

english

File:

PDF, 491 KB

english, 1996

13

Simple multiwavelength device fabrication technique using a single-grating holographic exposure

Delorme, F., Grosmaire, S., Alibert, G., Slempkes, S., Ougazzaden, A.

Journal:

IEEE Photonics Technology Letters

Year:

1996

Language:

english

File:

PDF, 369 KB

english, 1996

14

20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage

Devaux, F., Dorgeuille, F., Ougazzaden, A., Huet, F., Carre, M., Carenco, A., Henry, M., Sorel, Y., Kerdiles, J.-F., Jeanney, E.

Journal:

IEEE Photonics Technology Letters

Year:

1993

Language:

english

File:

PDF, 309 KB

english, 1993

15

[IEEE Conference Digest. 15th IEEE International Semiconductor Laser Conference - Haifa, Israel (13-18 Oct. 1996)] Conference Digest. 15th IEEE International Semiconductor Laser Conference - Constant output power and low linewidth in a simple wide tuning DFB laser with multiwavelength grating

Talneau, A., Slempkes, S., Ougazzaden, A.

Year:

1996

Language:

english

File:

PDF, 166 KB

english, 1996

16

High-speed tandem of MQW modulators for coded pulse generation with 14-dB fiber-to-fiber gain

Devaux, F., Souli, N., Ougazzaden, A., Huet, F., Carre, M.

Journal:

IEEE Photonics Technology Letters

Year:

1996

Language:

english

File:

PDF, 355 KB

english, 1996

17

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 7 February 2015)] Oxide-based Materials and Devices VI - Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers

Teherani, Ferechteh H., Look, David C., Rogers, David J., Rogers, D. J., Sundaram, S., El Gmili, Y., Teherani, F. Hosseini, Bove, P., Sandana, V., Voss, P. L., Ougazzaden, A., Rajan, A., Prior, K. A.,

Year:

2015

Language:

english

File:

PDF, 1.21 MB

english, 2015

18

Suppression of fringe diffraction in localized holographic exposure for DFB laser arrays

Talneau, A., Chandouineau, J.P., Charil, J., Ougazzaden, A.

Journal:

IEEE Photonics Technology Letters

Year:

1995

Language:

english

File:

PDF, 384 KB

english, 1995

19

Lossless InAsP-InGaP modulator at 1.3 μm for optical conversion of radio signals up to 40 GHz

Devaux, F., Ougazzaden, A., Huet, F., Carre, M.

Journal:

IEEE Photonics Technology Letters

Year:

1997

Language:

english

File:

PDF, 48 KB

english, 1997

20

[IEEE 13th IEEE International Semiconductor Laser Conference - Kagazwa, Japan (Sept. 21-25, 1992)] 13th IEEE International Semiconductor Laser Conference - Direct evidence for transport limited bandwidth of 1.55μm quantum well lasers

Hangleiter, A., Grabmaier, A., Schofthaler, M., Kazmierski, C., Blez, M., Ougazzaden, A.

Year:

1992

Language:

english

File:

PDF, 134 KB

english, 1992

21

Wavelength accuracy in distributed phase-shifted DFB lasers

Talneau, A., Charil, J., Ougazzaden, A.

Journal:

IEEE Photonics Technology Letters

Year:

1999

Language:

english

File:

PDF, 77 KB

english, 1999

22

Electroabsorption modulators for high-bit-rate optical communications: a comparison of strained InGaAs/InAIAs and InGaAsP/InGaAsP MQW

Devaux, F, Chelles, S, Ougazzaden, A, Mircea, A, Harmand, J C

Journal:

Semiconductor Science and Technology

Year:

1995

Language:

english

File:

PDF, 1.08 MB

english, 1995

23

Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer

Rajan, Akhil, Rogers, David J, Ton-That, Cuong, Zhu, Liangchen, Phillips, Matthew R, Sundaram, Suresh, Gautier, Simon, Moudakir, Tarik, El-Gmili, Youssef, Ougazzaden, Abdallah, Sandana, Vinod E, Teher

Journal:

Journal of Physics D Applied Physics

Year:

2016

Language:

english

File:

PDF, 3.98 MB

english, 2016

24

40-Gb/s tandem electroabsorption modulator

Mason, B., Ougazzaden, A., Lentz, C.W., Glogovsky, K.G., Reynolds, C.L., Przybylek, G.J., Leibenguth, R.E., Kercher, T.L., Boardman, J.W., Rader, M.T., Geary, J.M., Walters, F.S., Peticolas, L.J., Fre

Journal:

IEEE Photonics Technology Letters

Year:

2002

Language:

english

File:

PDF, 73 KB

english, 2002

25

Full polarization insensitivity of a 20 Gb/s strained-MQW electroabsorption modulator

Devaux, F., Chelles, S., Ougazzaden, A., Mircea, A., Carre, M., Huet, F., Sorel, A.C.Y., Kerdiles, J.F., Henry, M.

Journal:

IEEE Photonics Technology Letters

Year:

1994

Language:

english

File:

PDF, 321 KB

english, 1994

26

[IEEE 12th IEEE International Conference on Semiconductor Laser - Switzerland (Sept. 9-14, 1990)] 12th IEEE International Conference on Semiconductor Laser - High static performance GaInAs/GaInAsP SCH MQW 1.5μm wavelength buried ridge stripe lasers

Kazmierski, C., Ougazzaden, A., Blez, M., Robein, D., Landreau, J., Sermage, B., Bouley, J.C., Mircea, A.

Year:

1990

Language:

english

File:

PDF, 152 KB

english, 1990

27

Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy

Pantzas, K, Patriarche, G, Troadec, D, Gautier, S, Moudakir, T, Suresh, S, Largeau, L, Mauguin, O, Voss, P L, Ougazzaden, A

Journal:

Year:

2012

Language:

english

File:

PDF, 2.02 MB

english, 2012

28

[IEEE 13th IEEE International Semiconductor Laser Conference - Kagazwa, Japan (Sept. 21-25, 1992)] 13th IEEE International Semiconductor Laser Conference - Linewidth, tunability and FM response of strongly-coupled strained-MW three-electrode DFB lasers

Correc, P., Charil, J., Ougazzaden, A., de Faria, I.F., Pienre, B., Bouley, J.C.

Year:

1992

Language:

english

File:

PDF, 218 KB

english, 1992

29

Accurate wavelength spacing from absorption-coupled DFB laser arrays

Talneau, A., Bouadma, N., Slempkes, S., Ougazzaden, A., Hansmann, S.

Journal:

IEEE Photonics Technology Letters

Year:

1997

Language:

english

File:

PDF, 46 KB

english, 1997

30

Gain modeling of strained InGaAsP based MQW optical amplifiers

Debaisieux, G., Guemmouri, M., Chelles, S., Ougazzaden, A., Herve-Gruyer, G., Filoche, M., Martin, J.-Y.

Journal:

IEEE Photonics Technology Letters

Year:

1997

Language:

english

File:

PDF, 91 KB

english, 1997

31

[IEEE Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference - Nara, Japan (4-8 Oct. 1998)] Conference Digest. ISLC 1998 NARA. 1998 IEEE 16th International Semiconductor Laser Conference (Cat. No. 98CH361130) - InGaAsN laser structures and LEDs at 1.3 μm grown on GaAs substrate by AP-MOVPE

Bouchoule, S., Ougazzaden, S., Mereuta, A., Sermage, B., Pierre, B., Boulet, P.

Year:

1998

Language:

english

File:

PDF, 137 KB

english, 1998

32

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

Ayari, Taha, Sundaram, Suresh, Li, Xin, El Gmili, Youssef, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

Journal:

Applied Physics Letters

Year:

2016

Language:

english

File:

PDF, 1.33 MB

english, 2016

33

Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-μm laser

Allovon, M., Fouchet, S., Harmand, J.-C., Ougazzaden, A., Rose, B., Gloukhian, A., Devaux, F.

Journal:

IEEE Photonics Technology Letters

Year:

1995

Language:

english

File:

PDF, 286 KB

english, 1995

34

[IEEE IEEE 14th International Semiconductor Laser Conference - Maui, HI, USA (19-23 Sept. 1994)] Proceedings of IEEE 14th International Semiconductor Laser Conference - Novel high performance strained layer MQW monolithically integrated DFB laser-electroabsorption modulator using one identical single active layer

Ramdane, A., Ougazzaden, A., Devaux, F., Delorme, F., Schneider, M., Landreau, J., Gloukhian, A.

Year:

1994

Language:

english

File:

PDF, 189 KB

english, 1994

35

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California (Saturday 22 January 2011)] Oxide-based Materials and Devices II - Application of dilute boron B(Al,In,Ga)N alloys for UV light sources

Gautier, S., Abid, M., Moudakir, T., Orsal, G., En Naciri, A., Pantzas, K., Jomard, F., Voss, P. L., Rogers, D. J., Teherani, F. Hosseini, Ougazzaden, A., Teherani, Ferechteh H., Look, David C., Roger

Year:

2011

Language:

english

File:

PDF, 1.05 MB

english, 2011

36

Ingaasp/ingaasp multiple-quantum-well modulator with improved saturation intensity and bandwidth over 20 ghz

Devaux, F., Bigan, E., Ougazzaden, A., Pierre, B., Huet, F., Carre, M., Carenco, A.

Journal:

IEEE Photonics Technology Letters

Year:

1992

Language:

english

File:

PDF, 427 KB

english, 1992

37

[IEEE 13th IEEE International Semiconductor Laser Conference - Kagazwa, Japan (Sept. 21-25, 1992)] 13th IEEE International Semiconductor Laser Conference - 1.55μm multi-quantum-well lasers with record performance obtained by atmospheric pressure MOVPE using an organometallic phosphorous precursor bis(phosphinoethane)

Ougazzaden, A., Mircea, A., Mellet, R., Primot, G., Kazmierski, C.

Year:

1992

Language:

english

File:

PDF, 180 KB

english, 1992

38

Experimental Study and Device Design of NO, NO 2 , and NH 3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT

Bishop, Chris, Halfaya, Yacine, Soltani, Ali, Sundaram, Suresh, Li, Xin, Streque, Jeremy, El Gmili, Youssef, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

Journal:

IEEE Sensors Journal

Year:

2016

Language:

english

File:

PDF, 5.12 MB

english, 2016

39

Modeling, design, fabrication and experimentation of a GaN-based, 63 Ni betavoltaic battery

Munson, C E, Gaimard, Q, Merghem, K, Sundaram, S, Rogers, D J, de Sanoit, J, Voss, P L, Ramdane, A, Salvestrini, J P, Ougazzaden, A

Journal:

Journal of Physics D Applied Physics

Year:

2018

Language:

english

File:

PDF, 1.73 MB

english, 2018

40

[IEEE Conference Digest. 15th IEEE International Semiconductor Laser Conference - Haifa, Israel (13-18 Oct. 1996)] Conference Digest. 15th IEEE International Semiconductor Laser Conference - Barrier strain influence on the high speed properties of compressively strained InGaAsP multi-quantum well laser structures

Bouchoule, S., Kazmierski, C., Mathoorasing, D., Ougazzaden, A., Marzin, J.-Y.

Year:

1996

Language:

english

File:

PDF, 204 KB

english, 1996

41

20-Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55-μm WDM applications

Delprat, D., Ramdane, A., Silvestre, L., Ougazzaden, A., Delorme, F., Slempkes, S.

Journal:

IEEE Photonics Technology Letters

Year:

1997

Language:

english

File:

PDF, 58 KB

english, 1997

42

[IEEE 12th IEEE International Conference on Semiconductor Laser - Switzerland (Sept. 9-14, 1990)] 12th IEEE International Conference on Semiconductor Laser - Influence of the P type doping of the InP cladding layer on the threshold current density in 1.5μm Q.W. lasers

Sermage, B., Blez, M., Kazmierski, C., Ougazzaden, A., Mircea, A., Bouley, J.C.

Year:

1990

Language:

english

File:

PDF, 122 KB

english, 1990

43

Interface state effects in GaN Schottky diodes

A. Ahaitouf, H. Srour, S. Ould Saad Hamady, N. Fressengeas, A. Ougazzaden, J.P. Salvestrini

Journal:

Thin Solid Films

Year:

2012

Language:

english

File:

PDF, 613 KB

english, 2012

44

Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride

Sundaram, Suresh, Li, Xin, Halfaya, Yacine, Ayari, Taha, Patriarche, Gilles, Bishop, Christopher, Alam, Saiful, Gautier, Simon, Voss, Paul L., Salvestrini, Jean Paul, Ougazzaden, Abdallah

Journal:

Advanced Materials Interfaces

Year:

2019

Language:

english

File:

PDF, 1.88 MB

english, 2019

45

Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth

W.H. Goh, G. Patriarche, P.L. Bonanno, S. Gautier, T. Moudakir, M. Abid, G. Orsal, A.A. Sirenko, Z.-H. Cai, A. Martinez, A. Ramdane, L. Le Gratiet, D. Troadec, A. Soltani, A. Ougazzaden

Journal:

Journal of Crystal Growth

Year:

2011

Language:

english

File:

PDF, 1.47 MB

english, 2011

46

Planar selective regrowth of high resistivity semi-insulating InP(Fe) by LP-MOVPE for buried lasers using TBP

H Sik, Y Le Bellego, P Win, S Bouchoule, G Patriarche, P Boulet, G Le Mestreallan, A Ougazzaden

Journal:

Journal of Crystal Growth

Year:

1998

Language:

english

File:

PDF, 1.03 MB

english, 1998

47

Self-induced laterally modulated GaInP/InAsP structure grown by metal-organic vapor-phase epitaxy

Ponchet, A., Rocher, A., Ougazzaden, A., Mircea, A.

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 641 KB

english, 1994

48

Cation interdiffusion in InGaAsP/InGaAsP multiple quantum wells with constant P/As ratio

Hamoudi, A., Ougazzaden, A., Krauz, Ph., Rao, E. V. K., Juhel, M., Thibierge, H.

Journal:

Applied Physics Letters

Year:

1995

Language:

english

File:

PDF, 305 KB

english, 1995

49

[IEEE 1998 International Semiconductor Conference. CAS'98 Proceedings - Sinaia, Romania (6-10 Oct. 1998)] 1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351) - Review and prospects for VPE, MOVPE, MBE and CBE (MOMBE) of InP and related materials

Mircea, A., Alexandre, F., Decobert, J., Goldstein, L., Harmand, J.-C., Ougazzaden, A.

Year:

1998

Language:

english

File:

PDF, 624 KB

english, 1998

50

[IEEE 8th International Conference on Indium Phosphide and Related Materials - Schwabisch-Gmund, Germany (21-25 April 1996)] Proceedings of 8th International Conference on Indium Phosphide and Related Materials - Record tuning range of a 1.55 μm DBR laser realized by selective area growth

Delprat, D., Silvestre, L., Ougazzaden, A., Delorme, F., Slempkes, S., Ramdane, A.

Year:

1996

Language:

english

File:

PDF, 271 KB

english, 1996

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